The DDR4 standard allows for memory to be accessed at twice the data rate of its preceding standard, DDR3 while simultaneously reducing the total power consumption and increasing the memory density. In this project a physical layer (PHY) interface for the DDR4 subsystem has been conceptualized, and designed. As memory devices eternally seek to be faster, denser and extremely low power consuming systems, the PHY interface will get us another step further in this quest. In this report, the challenges and circuit techniques associated with the design of this high data-rate interface have been discussed along with the main differentiating factors between DDR4 and its predecessor, DDR3. The design process and results for the receiver front-end of the physical layer are among the major focus points of this report.
Title
Next Generation Memory Interfaces
Published
2015-05-14
Full Collection Name
Electrical Engineering & Computer Sciences Technical Reports
Other Identifiers
EECS-2015-115
Type
Text
Extent
38 p
Archive
The Engineering Library
Usage Statement
Researchers may make free and open use of the UC Berkeley Library’s digitized public domain materials. However, some materials in our online collections may be protected by U.S. copyright law (Title 17, U.S.C.). Use or reproduction of materials protected by copyright beyond that allowed by fair use (Title 17, U.S.C. § 107) requires permission from the copyright owners. The use or reproduction of some materials may also be restricted by terms of University of California gift or purchase agreements, privacy and publicity rights, or trademark law. Responsibility for determining rights status and permissibility of any use or reproduction rests exclusively with the researcher. To learn more or make inquiries, please see our permissions policies (https://www.lib.berkeley.edu/about/permissions-policies).