The low frequency 1/f noise in CMOS impacts the performance of analog and RF circuits such as high performance operational ampliers, low IF mixers and VCO phase noise. As the transistor area is scaled down, low frequency noise is Lorenztian-like and it exhibits more device-to-device variations. The variability in flicker noise is becoming increasingly important for circuits using very small transistors. It is thus necessary to develop a statistical compact model for flicker noise to enable a robust design of analog circuits. In this report, such a model is developed to describe statistical flicker noise behavior. The Statistical Flicker Noise Analytical Model is developed which includes analytical mean and standard deviation with a new model parameter. The model will predict noise magnitudes at given frequencies and yield percentiles.
Title
A Statistical Flicker Noise Analytical Model in Scaled Bulk MOSFETs
Published
2009-01-27
Full Collection Name
Electrical Engineering & Computer Sciences Technical Reports
Other Identifiers
EECS-2009-18
Type
Text
Extent
39 p
Archive
The Engineering Library
Usage Statement
Researchers may make free and open use of the UC Berkeley Library’s digitized public domain materials. However, some materials in our online collections may be protected by U.S. copyright law (Title 17, U.S.C.). Use or reproduction of materials protected by copyright beyond that allowed by fair use (Title 17, U.S.C. § 107) requires permission from the copyright owners. The use or reproduction of some materials may also be restricted by terms of University of California gift or purchase agreements, privacy and publicity rights, or trademark law. Responsibility for determining rights status and permissibility of any use or reproduction rests exclusively with the researcher. To learn more or make inquiries, please see our permissions policies (https://www.lib.berkeley.edu/about/permissions-policies).
