Silicon can be etched in fluorine- and chlorine- containing plasmas in many ways. This article discusses some of the basic chemical and physical phenomena which play a role and more complicated interactions and side effects found in commercial process equipment.
Title
Mechanisms of Silicon Etching in Fluorine- and Chlorine- containing Plasmas
Published
1990-05-01
Full Collection Name
Electrical Engineering & Computer Sciences Technical Reports
Other Identifiers
ERL-90-41
Type
Text
Extent
28 p
Archive
The Engineering Library
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