Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.
Title
Slow and Fast Light in Semiconductors
Published
2008-02-14
Full Collection Name
Electrical Engineering & Computer Sciences Technical Reports
Other Identifiers
EECS-2008-15
Type
Text
Extent
148 p
Archive
The Engineering Library
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