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Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.

Title
Slow and Fast Light in Semiconductors
Creator
Sedgwick, Forrest G., Author
EECS Department, University of California, Publisher
Published
2008-02-14
Full Collection Name
Electrical Engineering & Computer Sciences Technical Reports
Other Identifiers
EECS-2008-15
Type
Text
Format
technical reports
Extent
148 p
Archive
The Engineering Library
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