PDF

Description

Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.

Details

Title
Slow and Fast Light in Semiconductors
Creator
Sedgwick, Forrest G., Author
EECS Department, University of California, Publisher
Published
2008-02-14
Full Collection Name
Electrical Engineering & Computer Sciences Technical Reports
Other Identifiers
EECS-2008-15
Type
Text
Format
technical reports
Extent
148 p
Archive
The Engineering Library
Usage Statement
Researchers may make free and open use of the UC Berkeley Library’s digitized public domain materials. However, some materials in our online collections may be protected by U.S. copyright law (Title 17, U.S.C.). Use or reproduction of materials protected by copyright beyond that allowed by fair use (Title 17, U.S.C. § 107) requires permission from the copyright owners. The use or reproduction of some materials may also be restricted by terms of University of California gift or purchase agreements, privacy and publicity rights, or trademark law. Responsibility for determining rights status and permissibility of any use or reproduction rests exclusively with the researcher. To learn more or make inquiries, please see our permissions policies (https://www.lib.berkeley.edu/about/permissions-policies).
Collection

Files

Statistics

from
to
Export
Download Full History