The electron-hole (EH) Bilayer Tunneling Field-Effect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for a given on-state conductance, Si, Ge, and InAs all have similar gate efficiency, around 40-50%. Unlike Si & Ge, only the InAs case allows a manageable work function difference for EH Bilayer Transistor operation.
Title
Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor
Published
2013-12-31
Full Collection Name
Electrical Engineering & Computer Sciences Technical Reports
Other Identifiers
EECS-2013-249
Type
Text
Extent
10 p
Archive
The Engineering Library
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