Description
In this dissertation, our III-V nanopillar lasers experimentally demonstrate integration capabilities with silicon-based electronics and photonics. The nucleation and growth mechanism of InGaAs and InP nanopillars is first studied with characterization observations, unveiling the reason accounting for the high quality nanopillar. The superior crystal quality, together with unique 3D whispering gallery mode, enables the laser oscillation in as-grown nanopillars. To prove the CMOS compatibility, these nanolasers are monolithically grown onto silicon-based transistor chips, without compromising the electronic performance of chips. In addition, horizontal nanopillar growth is developed to integrate nanolasers with silicon waveguides in an end-fire manner. The coupling between laser and waveguide is prominently observed under photoluminescence experiment, serving as a proof-of-concept for integration with more complicated photonic circuits. To avoid laser emission absorbed by silicon, long wavelength lasers are obtained with InP/InGaAs/InP quantum well nanpillars and three novel optical cavities. Detailed laser modeling is also performed to provide guidance for further laser optimization. For electrical pumping, we also explores methods to make perfect nanopillar diodes. Furthermore, an optical link with nanopillar devices and polymer waveguide is shown to be functional to transmit signals on silicon substrate. With these experimental demonstrations, this III-V nanolaser strategy presents a great potential to achieve on-chip laser source.