A new method of testing high numerical aperture microlithographic lenses has recently been demonstrated. This method involves directly measuring the aerial image produced by the lens rather than using developed resist profiles or latent images produced in resist. Direct measurement of the aerial image eliminates any process variations associated with the resist processing and also removes the subjective nature of evaluating resist profiles. We explore the use of amorphous silicon as an alternative to chrome for Deep UV photolithography masks. The primary advantage is that patterns may be dry etched. As masks feature sizes continue to shrink, this dry etch capability of Amorphous silicon can be a significant factor. Amorphous silicon has a further advantage of high absorbtivity over the 190-350nm region.
Title
Direct Aerial Image Measurements at 248nm
Published
1993-11-01
Full Collection Name
Electrical Engineering & Computer Sciences Technical Reports
Other Identifiers
ERL-93-85
Type
Text
Extent
38 p
Archive
The Engineering Library
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