A simple, general and realistic MOSFET model is introduced. The model can express the current characteristics of short-channel MOSFETs at least down to .25 micro meter channel length, GaAs FET, and resistance inserted MOSFETs. The model evaluation time is about 1/3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single variable equations and thus can be done within a second, being different from the fitting procedure with expensive numerical iterations employed for the conventional models. The model also enables analytical treatments of circuits in short-channel region and makes up for a missing link between a complicated MOSFET current characteristics and circuit behaviors in the deep submicron region.
Title
A Simple MOSFET Model for Circuit Analysis and Its Application to CMOS Gate Delay Analysis and Series-Connected MOSFET Structure
Published
March, 1990
Full Collection Name
Electrical Engineering & Computer Sciences Technical Reports
Other Identifiers
ERL-90-19
Type
Text
Extent
58 p
Archive
The Engineering Library
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