Description
A simple, general and realistic MOSFET model is introduced. The model can express the current characteristics of short-channel MOSFETs at least down to .25 micro meter channel length, GaAs FET, and resistance inserted MOSFETs. The model evaluation time is about 1/3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single variable equations and thus can be done within a second, being different from the fitting procedure with expensive numerical iterations employed for the conventional models. The model also enables analytical treatments of circuits in short-channel region and makes up for a missing link between a complicated MOSFET current characteristics and circuit behaviors in the deep submicron region.