While science has good knowledge of semiconductor bandgaps, there is not much information regarding the steepness of the band-edges. We find that a plot of absolute conductance, I/V versus voltage, V, in an Esaki diode or a backward diode will reveal a best limit for the band tails, defined by the tunneling joint density of states of the two band-edges. This joint density of states will give information about the prospective subthreshold swing voltage that could be expected in a tunneling field effect transistor. To date, published I-V characteristics indicate that the joint band-tail density of states is not steep enough to achieve less than 60mV/decade. Heavy doping inhomogeneity, among other inhomogeneities, result in a gradual density of states extending into the band gap. The steepest measured tunnel diodes have had a tunneling joint density of states greater than 90mV/decade.
Title
Band-Edge Steepness Obtained from Esaki/Backward Diode Current-Voltage Characteristics
Published
2013-12-31
Full Collection Name
Electrical Engineering & Computer Sciences Technical Reports
Other Identifiers
EECS-2013-245
Type
Text
Extent
8 p
Archive
The Engineering Library
Usage Statement
Researchers may make free and open use of the UC Berkeley Library’s digitized public domain materials. However, some materials in our online collections may be protected by U.S. copyright law (Title 17, U.S.C.). Use or reproduction of materials protected by copyright beyond that allowed by fair use (Title 17, U.S.C. § 107) requires permission from the copyright owners. The use or reproduction of some materials may also be restricted by terms of University of California gift or purchase agreements, privacy and publicity rights, or trademark law. Responsibility for determining rights status and permissibility of any use or reproduction rests exclusively with the researcher. To learn more or make inquiries, please see our permissions policies (https://www.lib.berkeley.edu/about/permissions-policies).