A new algorithm, namely a Fast Simulated Diffusion (FSD) is proposed to solve a multiminimal optimization problem on multi-dimensional continuous space. The algorithm performs a greedy search and random search alternately and can give the global minimum with a practical success rate. A new efficient hill-descending method which is employed as the greedy search in the FSD is proposed. When the FSD is applied to a set of standard test functions, it shows an order of magnitude faster speed than the conventional simulated diffusion. Some of the optimization problems encountered in system and VLSI designs are classified into the multi-optimal problems. A MOSFET parameter extraction problem is one of them and the proposed FSD is successfully applied to the problem with a deep sub-micron MOSFET. A program listings are also attached.
Title
MOSFET Model Parameter Extraction Based on Fast Simulated Diffusion
Published
March, 1990
Full Collection Name
Electrical Engineering & Computer Sciences Technical Reports
Other Identifiers
ERL-90-20
Type
Text
Extent
40 p
Archive
The Engineering Library
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